|
| @¡BGO |
 |
Applications include SAW devices
and Electro-optic sensors
|
| @¡Character |
@| |
EHigh-quality single crystal fabricated by crystal growth method acquired through
technology transfer from Taki Chemical Co., Ltd.
EChemical formula: Bi12GeO20 (cubic crystalline structure)
Edielectric constant ƒÃ 11:38
EPiezo
coefficient: 0.983C/m2
ESAW velocity: 1.681km/sec
EElectric coefficient ‚’41F3.1pm/V at 850nm
|
| @¡Publication list |
| 1) |
A.B.Meshalkin and A.B.Kaplun ;"Melt viscosity of binary system
Bi2O3-GeO2", J. Crystal Growth, 275 (2005) 905 |
| 2) |
A.B.Kaplun, B.I.Kidyarov and A.B.Meshalkin ;"Extent of oxide
compounds dissociation and nucleation kinetics in melts of the Bi2O3-GeO2
systems: experimental study and theoretical analysis", J. Crystal Growth,
275 (2005) 169 |
| 3) |
S.Kumaragurubaran, S.M.Babu, C.Subramanian and P.Ramasamy ;"Growth
and characterization of Bi12SiO20 and Bi12GeO20 crystals", Ind. J. Eng.
Mat. Sciences, 7 (2000) 331 |
| 4) |
S.Moorthy Babu, K.Kitamura, S.Takekawa, K. Watanabe, T.Shimizu,
H.Okushi and I.Biaggio ;"Interband transitions in bismuth germinate crystals
grown from the melts of several [Ge]/[Bi] ratios", J. Opt. Soc. Am. B,
16 (1999) 1243 |
| 5) |
J.P.Fontaine, G.P.Extremet, V.Chevrier and J.C.Launay ;"Experimental
and theoretical treatments of the Czochralski growth of Bi12GeO20", J.
Crystal Growth, 139 (1994) 67 |
| 6) |
M.Murota and Y.Shimizu ;"Characteristics of surface acoustic
wave propagating on Bi12GeO20 substrate", J.J.Appl.Phys., 27 (1988) 157 |
| 7) |
B.C.Grabmaier and R.Obersohmid ;"Properties of pure and doped
Bi12GeO20 and Bi12SiO20 crystals", Phys. Stat. Sol. 96 (1986) 199 |
|
|
|
HOME
