Crystals for Power Electronics
Use of Crystals for Power Electronics
Power semiconductors are core devices of every energy control system — from electric vehicles to industrial machinery.
We are pioneering the development of Silicon Carbide (SiC) and Gallium Oxide (Ga₂O₃) single crystal substrates — next-generation materials that push beyond the limits of conventional silicon. Engineered for high breakdown voltage and ultra-low loss, our innovations drive superior performance and a more energy-efficient future.
SiC Crystal
SiC Crystal
OXIDE Power Crystal (OPC) is proud to be part of the “Green Innovation Fund Projects” — “Next-generation Digital Infrastructure Construction“ — led by the New Energy and Industrial Technology Development Organization (NEDO).
In collaboration with Mipox Corporation, UJ-Crystal Inc., Aixtal Corporation, the National Institute of Advanced Industrial Science and Technology (AIST), and Nagoya University (Tokai National Higher Education and Research System), OPC has been advancing cutting-edge research and development in solution-grown SiC single crystals and wafers — pushing the boundaries of what next-generation power devices can achieve.
p-Type vs. n-Type semiconductor SiC Crystals
Semiconductor SiC single crystal substrates are classified by the type of dopant introduced during crystal growth. When electrons serve as the primary charge carriers, the result is an n-type substrate — typically appearing light green. When electron holes take that role, the substrate is p-type — characteristically blue in appearance.
The dominance of n-Type in today's market
Today, virtually the entire SiC market is built on n-type substrates. SiC MOSFETs — which leverage unipolar conduction using electrons alone — have become the driving force behind the power semiconductor market, particularly for electric vehicles. Their compatibility with n-type substrates enables high-speed switching and ultra-low loss, cementing their position as the industry standard.
The rise of p-Type — unlocking the next frontier
Looking ahead, applications demanding extreme voltage tolerance and high power capacity — such as HVDC (High Voltage Direct Current) transmission and Solid-State Transformers (SST) for data centers — call for a different approach. SiC-IGBTs, which harness both electrons and holes through p/n junction operation, are widely anticipated to excel in these demanding environments.
However, realizing the full potential of SiC-IGBTs requires a high-quality p-type substrate. Conventional sublimation methods have long struggled with the precise control of p-type dopants such as aluminum, making mass production of viable p-type substrates a persistent challenge.
This is where solution growth technology changes the game. By enabling far greater control over crystal composition and dopant concentration during growth, solution-based methods make it possible to produce high-quality p-type SiC substrates — opening the door to next-generation SiC-IGBTs for ultra-high-voltage applications and accelerating the evolution of the SiC power device market.
About OXIDE Power Crystal Corporation (OPC)
OXIDE Power Crystal Corporation
OXIDE Power Crystal Corporation(OPC) was established on December 1, 2024, through an absorption-type company split from OXIDE Corporation — strategically carved out to carry forward and accelerate the power semiconductor materials business into its next chapter.