Mg:SLN (MgO doped Stoichiometric LiNbO3)

We have reduced the nonstoichiometric defects, which have a large effect on the optical and QPM device fabrication charactersitics, to produce a novel material.

  • Low coercive field (1/5 of CLN) 
    ⇒good for high accuracy, high speed QPM device processing
  • High thermal conductivity (20~50% higher than CLN & Mg:CLN)
  • Low GRIIRA
  • High photorefractive damage threshold 
    ⇒advantageous for high power lasers


Wafer size : 3 inches
(Effective area: 2 inches)


* Other dopants and dimensions would be available as customized request.

Technical Documents: