Mg:SLN

Mg:SLN (MgO doped Stoichiometric LiNbO₃)

We have reduced the nonstoichiometric defects, which have a large effect on the optical and QPM device fabrication charactersitics, to produce a novel material.

• Low coercive field (1/5 of CLN) 
  ⇒good for high accuracy, high speed QPM device processing
• High thermal conductivity (20~50% higher than CLN & Mg:CLN)
• Low GRIIRA
• High photorefractive damage threshold 
  ⇒advantageous for high power lasers

<Products>

Wafer size : 3 inches (Effective area: 2 inches)

Specification

 

＊ Other dopants and dimensions would be available as customized request.