Mg:SLN (MgO doped Stoichiometric LiNbO3)
We have reduced the nonstoichiometric defects, which have a large effect on the optical and QPM device fabrication charactersitics, to produce a novel material.
- Low coercive field (1/5 of CLN)
⇒good for high accuracy, high speed QPM device processing
- High thermal conductivity (20~50% higher than CLN & Mg:CLN)
- Low GRIIRA
- High photorefractive damage threshold
⇒advantageous for high power lasers
|Wafer size : 3 inches
(Effective area: 2 inches)
＊ Other dopants and dimensions would be available as customized request.